Laboratory Work No. 1 — Modeling Rectifiers in PROTEUS

What needs to be done:

1. Single-phase half-wave rectifier

   • Assemble the circuit with RES, CAP, DIODE, SINE generator.

   • Configure the generator, connect the oscilloscope.

   • Run the simulation, obtain the oscillograms of current and voltage.

   • Explain the time delays between them.

   • Build a time diagram through GRAPHS → ANALOGUE.

   • Change the generator voltage to 100 V and explain the changes.

   • Make a conclusion about the use of silicon diodes.

2. Two-phase half-wave rectifier

   • Use 2 diodes and 2 SINE generators.

   • Configure the sources and run the simulation.

   • Show the voltage and current curves.

3. Single-phase full-wave rectifier

   • Add a transformer TRAN-2P2S (1:1).

   • Perform the voltage simulation on the load.

4. Capacitive filter

   • Add a capacitor to the single-phase rectifier circuit (R=2kΩ).

   • Perform simulations at C=5 µF, 15 µF, 150 µF.

   • Compare the ripple levels.

   • Calculate the capacitance that gives 0.5 V ripple and confirm with simulation.

Laboratory Work No. 2 — Transistor in Common Base Circuit (CB). Measurement of α

What needs to be done:

1. Select the transistor 2N2222, assemble the circuit with CB configuration.

2. Method 1 — through graphs (diagrams):

   • Build the output characteristics (IC vs UC).

   • Build the input characteristics (IE vs UE).

   • Read ΔIC and ΔIE for the selected points.

   • Calculate α = ΔIC / ΔIE.

3. Method 2 — with ammeters:

   • Replace the graphs with two ammeters (milliamperes).

   • Take measurements and calculate α.

Laboratory Work No. 3 — Transistor in Common Emitter Circuit (CE). Measurement of β and h21E

What needs to be done:

1. Assemble the CE configuration circuit with the 2N2222 transistor.

2. Measure the static current transfer coefficient:

   • Set up two sources and two ammeters.

   • Run the simulation.

   • Calculate β = IC / IB.

3. Measure the small-signal coefficient h21E (β dynamic):

   • Take two measurements at different collector voltages (5 V and 6 V).

   • Find ΔIC and ΔIB.

   • Calculate β = ΔIC / ΔIB.

Laboratory Work No. 4 — Amplifier on Bipolar Transistor CE. Calculation of Gain Coefficient K

What needs to be done:

1. Assemble the amplifier circuit (2N2222, resistors, capacitors, battery).

2. Perform the calculations:

   • Operating point of the transistor.

   • R3 (collector resistor).

   • R4 + C2 (emitter stabilization).

   • Voltage divider R1 + R2.

   • Input capacitor C1.

3. Run the simulation and:

   • Check the output voltage (around 6 V).

   • Set the generator parameters and the position of POT-HG.

   • Measure the gain coefficient K.

   • Investigate phase relationships.

   • Increase the input signal and observe the transition through modes A → B → C → D.

Laboratory Work No. 5 — Amplifier on Unipolar Transistor CS (Common Source)

What needs to be done:

1. Assemble the circuit with the 2N7000 transistor, resistors, capacitors, and power supply.

2. Consider the features of field-effect transistors:

   • lower currents,

   • high resistance R3 ≈ 500 kΩ,

   • larger values for the input divider.

3. In the simulation:

   • Check the output voltage (~6 V).

   • Set POT-HG to 5–6%.

   • Calculate the gain coefficient.

   • Analyze phase relationships.

   • Increase the input signal and observe the transition to the switching mode.

Laboratory Work No. 6 — Modeling Compound Transistors (Darlington, Schikla, MOSFET)

What needs to be done:

1. Darlington Compound

   • Assemble the circuit with 2N2222 and MPS3702.

   • Set up ammeters (micro/milliampere).

   • Voltages: base – 2 V, collector – 12 V.

   • Measure β₁, β₂, and total β.

   • Compare β ≈ β₁ × β₂.

2. Schikla Circuit

   • Assemble the circuit according to the sample.

   • Voltages: base – 11.2 V, collector – 12 V.

   • Measure β₁, β₂, and total β.

   • Compare with the product β₁×β₂.

3. IGBT

   • Assemble the circuit with MOSFET + BJT (IGBT model).

   • Voltages: gate – 2 V, collector – 12 V.

   • Observe the operation of the device.

   • Explain why the input current ≈ 0 (isolated MOSFET gate).

What needs to be provided: Only the files